稀磁半导体系统工程分析方法及其应用

稀磁半导体(Diluted Magnetic Semiconductors, DMS)结合了半导体的电荷输运特性和磁性材料的信息存贮特性,是构建新一代自旋电子器件的关键材料。由于磁性元素的引入,使得稀磁半导体拥有一系列不同于一般半导体的特性。稀磁半导体能够实现同时操纵电子的电荷和自旋,使得电子的自由度增加,可以极大地提高磁存储的传输速率,因而引起很多研究者的关注。稀磁半导体是国际上研究的一个热点,而ZnO基稀磁半导体又是最引人瞩目的。目前多数3d过渡族元素(Transition metals,简写为TM))掺杂的ZnO都有实现铁磁性的报道,其中研究最为广泛的当属Co、Ni或Mn掺杂的ZnO,尽管取得了不少进展,但仍有许多问题(如ZnO：TM的磁性起源,ZnO：TM能否表现出内禀铁磁性等等)有待解决。在本论文中,利用磁控溅射制备了不同浓度的过渡族金属掺杂ZnO半导体样品。研究多种不同过渡金属掺杂ZnO半导体体系,对过渡金属掺杂导致ZnO基半导体的结构、光学以及磁学性质进行了详细的研究。结合SQUD、XRD和XPS等方法,解析过渡金属在基质ZnO中的存在方式,探讨铁磁性的产生机理,并重点对ZnO：V薄膜进行了研究。1.利用直流反应磁控溅射制备了ZnO：TM(V,Mn,Fe,Co,Ni)薄膜并对其结构,光学,磁学特性进行了研究。结果表明所有的薄膜都具有纤锌矿结构,在掺杂浓度相对较低的情况下,薄膜都沿着c轴取向生长,随着掺杂浓度的增大,有些薄膜变为非晶态,有些薄膜依然保持为多晶态。这是因为不同离子半径大小不同,使得晶格产生的畸变不同引起的。ZnO：V与ZnO：Fe薄膜的透过率都是随着薄膜的掺杂浓度的增大先减小后增大,而ZnO：Ni与ZnO：Co薄膜的透过率则随着掺杂浓度的增加而减小。2.在ZnO：TM(V,Mn,Fe,Co,Ni)薄膜中只有ZnO：V,ZnO：Mn薄膜具有室温铁磁性,其他均不具有室温铁磁性。经初步分析,在ZnO：Mn与ZnO：V中薄膜的铁磁性来源于薄膜中的掺杂离子与缺陷形成束缚磁极子。掺杂离子半径、缺陷浓度等都会不同程度的影响薄膜中束缚磁极子的形成。3.在不同条件下制备了ZnO：V系列样品,研究了总压强、氧偏压、衬底温度等工艺参数对ZnO：V薄膜结构及特性的影响。4.为了证明薄膜中的铁磁性与缺陷浓度有关,本文研究了退火对薄膜铁磁性的影响。研究表明,当退火温度小于500℃时,退火不会改变ZnO薄膜的纤锌矿结构。但晶体有所改善,晶粒逐渐增大,应力逐渐被释放,使得薄膜的透过率随着退火温度的增大而提高。薄膜在真空中退火会使其铁磁性增强,并且饱和磁化强度随着退火温度的增加而增加,在500℃退火薄膜的饱和磁化强度约为未退火薄膜的饱和磁化强度的两倍。而在空气中退火的薄膜并不具有室温铁磁性。5.在Si衬底上制备了不同V掺杂浓度的ZnO薄膜。在掺杂浓度比较小时薄膜具有高度的c轴取向,随着掺杂浓度的增大,(002)峰的强度逐渐减小。相同掺杂浓度的薄膜在Si衬底上比在玻璃上的结晶质量好。Si衬底上的薄膜的铁磁性与玻璃上制备的ZnO：V薄膜具有相同的趋势,但其饱和磁化强度较小,这从侧面说明了薄膜中的铁磁性与其缺陷浓度有关。6.采用了密度泛函理论的超软赝势能带计算方法,研究了纤锌矿ZnO及ZnO：Mn的电子结构,根据前面的实验结果,薄膜中Mn为四价Mn4+,为了保持电中性,去掉一个O2-。理论计算表明,ZnO：Mn的禁带宽度随着掺杂浓度的增大而逐渐增加,过渡金属Mn的掺入导致了自旋极化杂质能级的形成,电子自旋向上和自旋向下的总态密度分布存在着差别,具有不对称性,呈现铁磁性
逆变焊机
The engineering geological environment of urban is a complex system . Its complexity mainly expresses in its dynamic proporties under endo - genie and exogenic foroes, especially, human economic - engineering aotivity, as well as which causes a series of difficulties in the present evaluationand the trend forecast of the urban environmental engineering geology.This paper deal with the environmental engineering geological probl -ems caused by endogenic and exogenic factors. From the point of view of system engineering and technological method of knowledge en - gineering the basic way of urban environmental engineering geology has been approached. First, the paper elucidates the inevitability andessentialiity of the system engineering used to guide the study of the urban environemntal engineering geology. Second, taking Anshan City of liaoning Province, Tongohuan City of Shanxi Province, Nantong City of Jiangsu Province as exampls it presents in detail the methods of analysis, mumerioal simulation , quality evaluation and foroast ofurban environmental engineering geology on the basic of system engi -neering and computer technology. The earthquake risk analysis and emulation study of site seismic hazard effect in Anshan City ,thequality zonation of environmental engineering geology and system for - cast of geological hazard tendency in Tongchuan City , the grey for- cast of urban environmental engineering geology and analysis adep - ted for urban panning have been done. The computer aided working system which has various functions of data analysis, graphic analy - sis and symthesize evaluation hac been made . Form the aforementi -oned studies the technological way and method of environmental en -gineering geology of differential urbans have been aproached ,and some good suggests have been provided, which may be used to guide management of urban environmental engineering geological and the ur - ban pianning of three cities.